Electroabsorption in InGaAs/InP multiple quantum wells at high optical intensities

Thomas H. Wood; John Z. Pastalan; Charles A. Burrus; Barry I. Miller; Jose L deMiguel; Uziel Koren; Martin Young

doi:10.1364/IPR.1990.TuG4

Integrated Photonics Research
Technical Digest Series (Optica Publishing Group, 1990),
paper TuG4
•https://doi.org/10.1364/IPR.1990.TuG4

Electroabsorption in InGaAs/InP multiple quantum wells at high optical intensities

Thomas H. Wood, John Z. Pastalan, Charles A. Burrus, Barry I. Miller, Jose L deMiguel, Uziel Koren, and Martin Young

Integrated Photonics Research 1990

Hilton Head, South Carolina United States
26–28 March 1990
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Quantum-Well and Strained Layer Structures (TuG)

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T. H. Wood, J. Z. Pastalan, C. A. Burrus, B. I. Miller, J. L. deMiguel, U. Koren, and M. Young, "Electroabsorption in InGaAs/InP multiple quantum wells at high optical intensities," in Integrated Photonics Research, Technical Digest Series (Optica Publishing Group, 1990), paper TuG4.

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Abstract

Electroabsorption modulators made from multiple quantum wells (MQWs) show promise for application to optical fiber systems. Because of the relatively low absorption saturation intensities of MQWs² and bulk³ electroabsorption modulators. Here, we report, for the first time, mea surements of the saturation intensities of the electroabsorption in long-wavelength MQWs. We studied both the decrease in on/off ratio and changes in bandwidth of such devices at high input intensities. Preliminay studies of related effects have been reported in GaAs/AlGaAs MQWs.⁴

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