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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper THM2

Performance characteristics of strained InGaAs/AIGaAs quantum well lasers

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Abstract

Strained InGaAs quantum well (QW) lasers have been used to extend the lasing wavelength of quantum well lasers from ~0.9 out to nearly 1.1 μm. The structures reported here are grown by atmospheric pressure organometallic vapor phase epitaxy (OMVPE). As shown by the composition profile in Fig. 1, they are functionally equivalent to low threshold GaAs/AIGaAs QW lasers, except for a strained InxGa1-xAs QW active region replacing the normally unstrained GaAs QW active region.

© 1989 Optical Society of America

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