Abstract

High-power arrays of GaAs/AIGaAs and InGaAs/AIGaAs diode lasers are under intensive development as sources for pumping rare earth ions in solid-state lasers, as well as for other applications. Graded-index separate-confinement heterostructure single quantum-well (GRIN-SCH SQW) lasers are attractive for this application because of their low-threshold current density and high differential quantum efficiency. For efficient pumping, the diode-laser emission wavelength must coincide with the absorption band of the rare earth ion. This requirement necessitates close control of the properties of wafers used for diode fabrication. We have used a specially designed vertical rotating-disk reactor for growth by organometallic vapor-phase epitaxy (OMVPE) of GaAs, InGaAs, and AlGaAs layers with exceptional thickness and composition uniformity over5-cm-diameter GaAs wafers.

© 1990 Optical Society of America