Abstract
We describe experiments on the use of boron and fluorine implantation1 combined with furnace annealing to produce substantial blue shifts in the absorption edge of MQW waveguide structures fabricated in the AIGaAs-GaAs system. These experiments give a clear indication of good optical quality in the disordered waveguides and imply that these implantation species can be used as the basis for a versatile monolithic integration technology.2 Boron and fluorine were chosen because they provide electrically neutral doping, and, therefore, the increase in optical propagation loss due to free carrier absorption should be small. The MQW waveguide material was grown at Sheffield University by atmospheric pressure MOVPE using the conventional reagents IMG, TMA, and AsH3. To simplify both the implantation requirements and the analysis by photoluminescence spectroscopy, the MQw waveguide region was grown at the top of the structure, as shown in Fig. 1.
© 1989 Optical Society of America
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