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Conferences > IPR > 1991 > ThD > ThD3

Refractive-index changes arising from boron and fluorine impurity induced disordering in optoelectronic integration

S. I. Hansen, J. H. Marsh, J. S. Roberts, and R. Gwilliam

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Abstract

The technique of impurity induced disordering (IID) by using the neutral impurities boron and fluorine introduced by ion implantation has received much attention. As opposed to IID produced by diffusion, implantation by ion beams facilitates abrupt, localized regions in which disordering can be carried out. This permits good lateral and longitudinal control of the disordering process.

© 1991 Optical Society of America

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