Abstract
The electrooptic and nonlinear optical propeties of ferroelectric thin films such as lead lanthanum zirconate titanate (PLZT) offer potential advantages for optoelectronic devices and systems. A major advantage is the capability for growth of the films and monolithic integration of devices directly on semiconductors such as Si and GaAs. Electrooptic effects1 and electric field induced second harmonic generation (FISHG)2 measurements for PLZT 28/0/100 have been reported. Here we report an experimental and theoretical study of photoinduced charge carrier generation and transport that affect the material response, the basis of the photorefractive effect. Both birefringence and FISHG measurements were carried out on transmission and reflection from thin films (~700 nm) of PLZT 28/0/100 deposited on a variety of substrates including fused silica, Si, and GaAs. External fields were applied in the plane of the film using photolithographically defined electrodes.
© 1990 Optical Society of America
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