Abstract

Impressive performance has been demonstrated recently in diode-pumped Nd³⁺ lasers; however, a number of problems, such as narrow absorption bandwidth, thermal loading, and limited energy storage, make it difficult for these lasers to achieve higher powers and efficiencies. InGaAs diode-pumped Yb³⁺ lasers offer a number of advantages over Nd³⁺ lasers, including large absorption bandwidth in some hosts, lower heating per unit pump power, and longer upper-state lifetime. Here we report on an InGaAs diode-pumped Yb:YAG laser that we believe to be the first room-temperature Yb³⁺ laser in a bulk material.

© 1991 Optical Society of America