Abstract

The structure of Zn_1-xCd_xSe/ZnSe quantum wells has been proven effective in. confining carriers and has led to successful breakthrough in achieving blue laser diodes,¹ Recently the characterization of strained Zn_1-xCd_xSe-related heterostructures has been carried out both theoretically² and experimentally^3-5 The current study is focused on the aspect of band offsets for electrons and heavy- and light-holes in the strained layers. The multiple quantum wells (MQWs) grown for this study contain 40 periods of ZnCdSe as quantum wells (d = 70 Ǻ) and ZnSe as barriers (d = 200 Ǻ). Four MBE samples with systematic variation of Cd compositions (16% ~ 24%) have been investigated by the optical absorption measurement.

© 1993 Optical Society of America