Efficient 193 nm-laser assisted cryogenic etching of GaN with Cl2/CH4

B.C. Chen; H.C. Chiang; H.C. Chiang; C.C. Yang; C.C. Yang; Y.H. Peng; Y.H. Peng; M.C. Shih; M.C. Shih; T.J. Chuang; T.J. Chuang

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1999),
paper CThK10

Efficient 193 nm-laser assisted cryogenic etching of GaN with Cl₂/CH₄

B.C. Chen, H.C. Chiang, C.C. Yang, Y.H. Peng, M.C. Shih, and T.J. Chuang

Conference on Lasers and Electro-Optics 1999

Baltimore, Maryland United States
23–26 May 1999
ISBN: 1-55752-570-6

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B. C. Chen, H. C. Chiang, C. C. Yang, Y. H. Peng, M. C. Shih, and T. J. Chuang, "Efficient 193 nm-laser assisted cryogenic etching of GaN with Cl2/CH4," in Conference on Lasers and Electro-Optics, C. Chang-Hasnain, W. Knox, J. Kafka, and K. Vahala, eds., OSA Technical Digest (Optica Publishing Group, 1999), paper CThK10.

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Abstract

Cryo-etching provides a unique etching mechanism which combines cryogenic cooling of the substrate with laser-assisted excitation to enhance the anisotropy of the etching without causing damage to the etched surface.

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