Abstract
1. Introduction Recently, it was demonstrated that GaAs/AIAs superlattices could be changed from an indirect material to a direct one by applying an electric field.1 In InAlAs/AlAsSb multiple quantum wells2 radiative lifetime was varied from 220 ns to 5 μs. Stimulated emission in indirect gap GaAlAs was also observed.3 Recently, it was demonstrated that GaAs/AIAs superlattices could be changed from an indirect material to a direct one by applying an electric field.1 In InAlAs/AlAsSb multiple quantum wells2 radiative lifetime was varied from 220 ns to 5 μs. Stimulated emission in indirect gap GaAlAs was also observed.3 The existence of an indirect energy gap in superlattices can be used to implement optica! amplifiers with low cross-talk by sacrificing gains. Furthermore, Q-switched lasers may be possible by using the quasi-indirect transition, similar to the 1.064-pm transition in a Nd: YAG laser. During this presentation we report our growth and characterization of GaAs/AIAs superlattices as the first attempt for eventually using these structures for applications in amplifiers and lasers.
© 2002 Optical Society of America
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