Abstract
A microscope objective mounted on a computerized two-axis translation stage allows us to measure Spontaneous Emission (SE) spectra1 along the InGaAsP active layer of a Gain clamped Semiconductor optical Amplifier (GC-SOA) with a 1510 nm internal lasing mode selected by two DBRs of different reflectivity (1 % and 98%).
© 2002 Optical Society of America
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