Abstract

Carrier lifetime in a semiconductor laser is an important parameter, which greatly affects the modulation bandwidth and the turn-on delay of the laser. Recently, it has been pointed out that carrier lifetime and carrier recombination coefficient, which is the most fundamental parameter to determine the carrier lifetime, in quantum well lasers are the effective values and different from the intrinsic ones of the well layer because of the influence of carrier transport across the SCH layers.¹⁻³ In this work, we investigated the effective carrier recombination coefficient (B_eff) of 1.3 μm strained-layer quantum-well lasers and clarified the dominant factor to determine B_eff.

© 1995 IEEE