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Conferences > CLEOPR > 1995 > P > P51
  • The Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 1995),
  • paper P51

Polarization-independent electroabsorption modulator using strain-compensated InGaAs/InAlAs MQW structure

Kaoru Yoshino, Kouichi Wakita, Isamu Kotaka, Susumu Kondo, and Yoshio Noguchi

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Abstract

The multiple-quantum-well (MQW) electroabsorption modulators have advantages such as low driving voltage, high-speed operation,1 and monolithic integration with a DFB laser.4 Next, their strong polarization dependence in the modulation properties must be resolved for practical use. Many trials have reported for semiconductor optical modulators and switches2-4 to be polarizationinsensitive. However, the problems remain in the limitation of the operating voltage range, the reduction of power saturation level, or the low extinction ratio.

© 1995 IEEE

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