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Conferences > CLEOPR > 1995 > ThO > ThO5
  • The Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 1995),
  • paper ThO5

High yield 1.6 μm region compressively strained MQW-BH laser diodes by all MOVPE process

M. Akiyama, T. Sekiguchi, K. G. Ravikumar, S. Suzaki, R. Yamauchi, and K. Inada

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Abstract

We report the compressively strained InGaAs/InGaAsP multi-quantum-well (MQW) laser diodes (LDs) emitting at 1.6 pm region, which are promising supervisory light source for OTDR of optical subscriber system. The LDs are grown by all metalorganic vapor phase epitaxy (MOVPE) process and are fabricated very narrow leakage pass and uniform buried heterostructure (BH) shape.1,2 So very high yield and performance are realized in this work.

© 1995 IEEE

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