Abstract

The high transfer efficiency β_t ~ 15%, defined as a fraction of main cavity-mode photons emitted within a certain detection angle (30° in our case) from the normal to the surface to the total emitted photons, is one of the important results of the application of microcavities to semiconductor light emitting diodes. It has been shown, however, that a too high reflection coefficient of the cavity mirrors would not always lead to a larger β_t, because of the reabsorption for main-mode photons in the quantum well (QW).¹ In order to confirm further the photon reabsorption effect, we present in this talk, that the β_t, is continuously varied with excited carrier population in the QW and that the β_t can be recovered toward its empty cavity value by absorption bleaching.

© 1995 IEEE