Abstract

The use of semiconductor electro-absorption (EA) light modulators in high-bitrate optical transmitting and switching systems requires such characteristics as low insertion loss, low driving voltage, and wide modulation bandwidth.^1,2 However, optimization of structural parameters for the devices has been difficult to satisfy the above requirements simultaneously for their mutual dependencies. In this report, we propose and demonstrate a new structural design to reduce the insertion loss while preserving the other characteristics by controlling the light guiding condition.

© 1995 IEEE