Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • The 4th Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 2001),
  • paper ThC1_4

GaAs/AlGaAs buried-heterostructure laser diodes with semi-insulating GaInP:Fe regrowth

Not Accessible

Your library or personal account may give you access

Abstract

GaAs/AlGaAs buried-heterostructure in-plane lasers and vertical-cavity surface-emitting lasers using GalnP:Fe as the burying layer have been fabricated and investigated. Regrowth of GaInP:Fe around etched laser mesas was achieved by hydride vapor phase epitaxy. The lasers exhibit good performance under CW operation and show promising high-speed characteristics.

© 2001 IEEE

PDF Article
More Like This
Buried-heterostructure AlGaAs lasers on semi-insulating substrates

N. Bar-Chaim, J. Katz, A. Yariv, and I. Ury
MB3 Optical Fiber Communication Conference (OFC) 1981

Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy

D. Vakhshoori, M. Hong, L. H. Grober, J. P. Mannaerts, S. N. G. Chu, J. D. Wynn, and R. S. Freund
CWB4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993

InGaAsP/InP planar buried heterostructure laser with semi-insulating InP current blocking layers grown by MOCVD

K. Wakao, K. Nakai, T. Sanada, M. Kuno, and S. Yamakoshi
TuD5 Semiconductor Lasers (ASLA) 1987

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.