Abstract

InGaAsP/InP buried heterostructure (BH) lasers with semi-insulating InP current blocking layers have been extensively studied as ultra-high speed light sources because of their small parasitic capacitance. So far they have been demonstrated using vapor phase epitaxy (VPE) [1-5] and metalorganic chemical vapor deposition (MOCVD) epitaxy [6,7]. However, a completely planar structure, which offers many advantages such as high performance lasing characteristics, high yield and easy of integration, was not realized in the BH lasers regrown by MOCVD because of the difficulty of selective embedding epitaxial growth. In this paper, we report InGaAsP/InP planar BH lasers with semiinsulating InP blocking layers grown by MOCVD. A planar structure is realized by developing the selective embedding growth in MOCVD. Low threshold current of 17 mA and high frequency response up to 10 GHz is achieved with the BH lasers.

© 1987 Optical Society of America