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Conferences > CLEOPR > 2001 > ThC3 > ThC3_3
  • The 4th Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 2001),
  • paper ThC3_3

Room Temperature Continuous-Wave Operation of GaInNAs/GaAs VCSELs Grown by Chemical Beam Epitaxy with Output Power Exceeding 1mW

S. Makino, T. Miyamoto, T. Kageyama, Y. Ikenaga, N. Nishiyama, A. Matsutani, F. Koyama, and K. Iga

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Abstract

We fabricated a 1200 nm range GaInNAs/GaAs quantum wells vertical cavity surface emitting laser grown by chemical beam epitaxy. Room temperature continuous-wave operation has been demonstrated with a record low threshold current density of 2.6 kA/cm2.

© 2001 IEEE

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