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Conferences > CLEOPR > 2001 > TuF2 > TuF2_6
  • The 4th Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 2001),
  • paper TuF2_6

Carrier lifetime of low-temperature grown GaAs measured by pump-probe spectroscopy: effect of arsenic pressure during MBE crystal growth

R. Yano, Y. Hirayama, S. Miyashita, H. Sasabu, H. Nakano, N. Uesugi, and S. Uehara

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Abstract

Pump-probe spectroscopy showed that low-temperature grown GaAs grown at a higher As pressure has a shorter carrier lifetime than that grown at a low As pressure for both as-grown and anneal conditions.

© 2001 IEEE

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