Abstract
We report that a blue LED was successfully fabricated on a bounded InGaN/GaN/Si wafer, in which the InGaN/GaN epilayer was originally grown on a sapphire substrate then bonded and transferred to a Si substrate by laser liftoff technique.
© 2001 IEEE
PDF ArticleMore Like This
Jun-Youn Kim, Yongjo Tak, Jae Won Lee, Hyun-Gi Hong, Suhee Chae, Hyoji Choi, Bokki Min, Youngsoo Park, Minho Kim, Seongsuk Lee, Namgoo Cha, Yoonhee Shin, Jong-Ryeol Kim, and Jong-In Shim
CWF1 CLEO: Science and Innovations (CLEO:S&I) 2011
Jiaxiang Chen, Haolan Qu, Longheng Qi, Yaying Liu, Xu Zhang, Kei May Lau, and Xinbo Zou
T4A.220 Asia Communications and Photonics Conference (ACP) 2021
Hung-Wen Huang, Jung-Tang Chu, Chih-Chiang Kao, Chang-Chin Yu, Tien-Chang Lu, Hao-Chung Kuo, and Shing-Chung Wang
JWB79 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006