Abstract
We theoretically analyse strain-compensated GaAs1−xBix/GaNyAs1−y “W-type” quantum wells, demonstrating a viable approach to achieve efficient GaAs-based 1.3 and 1.55 µm lasers in which non-radiative Auger recombination is expected to be mitigated by type-II band offsets.
© 2022 IEEE
PDF ArticleMore Like This
L. J. Mawst, J. Y. Yeh, D. P. Xu, J. H. Park, J. Huang, A. Khandekar, T. F. Kuech, N. Tansu, I. Vurgaftman, and J. R. Meyer
CMBB6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006
S. J. B. Yoo, R. Bhat, M. A. Koza, and C. Caneau
QWJ3 Quantum Electronics and Laser Science Conference (CLEO:FS) 1995
C. Z. Guo, S. L. Chen, P. Dowd, and Y. H. Zhang
SMC3 Spatial Light Modulators and Integrated Optoelectronic Arrays (SLM) 1999