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Strain-compensated type-II GaAs1−xBix/GaNyAs1−y “W” quantum wells for GaAs-based telecom lasers

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Abstract

We theoretically analyse strain-compensated GaAs1−xBix/GaNyAs1−y “W-type” quantum wells, demonstrating a viable approach to achieve efficient GaAs-based 1.3 and 1.55 µm lasers in which non-radiative Auger recombination is expected to be mitigated by type-II band offsets.

© 2022 IEEE

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