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Conferences > CLEO > 2004 > CTuJ > CTuJ6
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper CTuJ6

Dilute-nitride mid-infrared type-II “W” quantum-well lasers on InP substrates

I. Vurgaftman, J. R. Meyer, N. Tansu, and L. J. Mawst

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Abstract

It is predicted that InAsN/GaAsSb/InAsN/GaInP strain-compensated type-II “W” quantum wells grown on InP substrates should emit in the mid-IR (3-5 µm) with favorable lasing characteristics.

© 2004 Optical Society of America

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