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Enhanced Internal-Quantum Efficiency of GaN-based Light-Emitting Diodes with a Larger Post-Duty Cycle of Patterned-Sapphire Substrates

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This paper reports the improvement of internal-quantum efficiency in GaN-based light-emitting diodes grown on the 2000-nm-period patterned-sapphire substrates with a larger post-duty cycle under the same etching depth.

© 2017 Optical Society of America

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