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Toward fully monolithic 1550-nm lasers on silicon by direct hetero-epitaxy growth on patterned substrates

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Abstract

We demonstrate diode rectifying behavior of 1550-nm laser structures on exact-oriented (001) silicon substrates after coalescence of densely-packed, smooth, highly crystalline, and millimeter-long indium phosphide nanowires grown by MOCVD using aspect-ratio-trapping and selective area growth.

© 2017 Optical Society of America

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