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Cryogenic-Temperature Operation of SPADs in Deep Submicrometer CMOS

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We discuss dark count, afterpulsing, and detection efficiency trends from 77K to 300K in SPADs fabricated in standard 90nm CMOS. With lps dead time, afterpulses and primary dark counts are traded-off optimally at 120K.

© 2020 The Author(s)

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