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Cryogenic-Temperature Operation of SPADs in Deep Submicrometer CMOS

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Abstract

We discuss dark count, afterpulsing, and detection efficiency trends from 77K to 300K in SPADs fabricated in standard 90nm CMOS. With lps dead time, afterpulses and primary dark counts are traded-off optimally at 120K.

© 2020 The Author(s)

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