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Carrier confinement enhancement of deep ultraviolet light emitting diode by incorporating inverted-V-shaped quantum barriers

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Abstract

We demonstrated an AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) stucture with the incorporation of inverted-V-shaped quantum barriers, which act as carrier reservoir layers and greatly improve the carrier confinement.

© 2021 The Author(s)

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