Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

AlGaN Deep Ultraviolet Light-Emitting Diodes Performance Enhancement Strategy at Last Quantum Barrier

Not Accessible

Your library or personal account may give you access

Abstract

To "function" as an inimitable strategy to decrease electron leakage and boost electron and hole injection efficiency for effective radiative recombination, we propose a DUV LED device design with a band-engineered last quantum barrier.

© 2023 The Author(s)

PDF Article
More Like This
Suppression of Efficiency Droop by Inserting a Thin Undoped AlGaN Layer into Each Quantum Barrier in AlGaN-Based Deep-Ultraviolet Light-Emitting Diode

Hongfeng Jia, Huabin Yu, Zhongjie Ren, Chong Xing, Zhongling Liu, Yang Kang, and Haiding Sun
AF2R.6 CLEO: Applications and Technology (CLEO:A&T) 2021

Signal-to-idler Energy Conversion from 1.9 to 2.3 µm by Transient Stimulated Raman Chirped-Pulse Amplification

Paulius Mackonis, Augustinas Petrulenas, and Aleksej M. Rodin
JW3A.5 Advanced Solid State Lasers (ASSL) 2022

Performance-boosted N-polar AlGaN deep ultraviolet light-emitting diodes by a top tunnel junction

Shudan Xiao, Huabin Yu, Hongfeng Jia, Danhao Wang, and Haiding Sun
JW2A.111 CLEO: Applications and Technology (CLEO:A&T) 2023

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.