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Ultrashort Pulse Laser-Induced Defects Underneath Undamaged Surface Region in ß-Gallium Oxide

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Abstract

We present results of 100-fs, 1030nm laser damage in single crystal n-type ß-gallium oxide, a wide-bandgap semiconductor. KPFM (Kelvin Probe Force Microscopy) and cathodoluminescence analysis reveals laser-induced defects that are undetectable by atomic force/optical microscopy.

© 2022 The Author(s)

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