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Heterogeneously Integrated Hybrid III-V/Silicon Superluminescent Diode with >10 mW Output Power

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Abstract

We demonstrate an O-band on-chip superluminescent diode emitting 10 mW broadband output power at 65 °C with a ripple amplitude of 0.8 dB. This is the highest reported power and efficiency for an on-chip SLD.

© 2023 The Author(s)

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