Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Transfer Printing of InGaN/GaN Quantum-Well Based Light Emitting Diodes

Not Accessible

Your library or personal account may give you access

Abstract

We demonstrate the transfer printing of an InGaN/GaN-QW based LED on a silicon substrate, emitting around 470 nm. This result is the first step toward heterogeneous integration of GaN-based devices on CMOS-compatible SiN photonic circuits.

© 2023 The Author(s)

PDF Article
More Like This
Metasurface-Based InGaN/GaN Light-Emitting Diodes with Unidirectional Emission

Yahya Mohtashami, Larry K. Heki, Matthew S. Wong, Jordan M. Smith, Jacob J. Ewing, William J. Mitchell, Shuji Nakamura, Steven P. DenBaars, and Jon A. Schuller
FF2D.7 CLEO: Fundamental Science (CLEO:FS) 2023

Differential Carrier Lifetimes and Efficiency of InGaN/ GaN Quantum Well and Quantum Dot Light Emitting Diodes

Animesh Banerjee, Meng Zhang, and Pallab Bhattacharya
CMU3 CLEO: Science and Innovations (CLEO:S&I) 2011

Effect of InGaN/GaN Multiple Quantum Wells with p-n Quantum Barriers on Efficiency Droop in Blue Light-emitting Diodes

Sheng-Wen Wang, Da-Wei Lin, Chia-Yu Lee, Che-Yu Liu, Yu-Pin Lan, Hao-Chung Kuo, and Shing-Chung Wang
JW2A.94 CLEO: Applications and Technology (CLEO:A&T) 2013

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.