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Metasurface-Based InGaN/GaN Light-Emitting Diodes with Unidirectional Emission

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Abstract

We demonstrate a novel metasurface-based light-emitting diode (LED) composed of InGaN/GaN nanoribbons with embedded quantum-well emitters. We use nanolithography to fabricate metasurface beam deflectors and observe that we can successfully direct LED’s emission as desired.

© 2023 The Author(s)

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