Incorporation of As to InP Quantum Dot Material for Near-Infrared Semiconductor Laser Diode

M. S. Al-Ghamdi; I. B. Karomi

doi:10.1364/CLEO_AT.2023.JTh2A.64

CLEO 2023
Technical Digest Series (Optica Publishing Group, 2023),
paper JTh2A.64
•https://doi.org/10.1364/CLEO_AT.2023.JTh2A.64

Incorporation of As to InP Quantum Dot Material for Near-Infrared Semiconductor Laser Diode

M. S. Al-Ghamdi and I. B. Karomi

CLEO: Applications and Technology 2023

San Jose, CA United States
7–12 May 2023
ISBN: 978-1-957171-25-8

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Joint Poster Session III (JTh2A)

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M. S. Al-Ghamdi and I. B. Karomi, "Incorporation of As to InP Quantum Dot Material for Near-Infrared Semiconductor Laser Diode," in CLEO 2023, Technical Digest Series (Optica Publishing Group, 2023), paper JTh2A.64.

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Abstract

We demonstrate the effect of arsenic composition percentage on inhomogeneous broadening, lasing wavelength and room temperature threshold current density. Lasing wavelength peak shows a red shift whereas inhomogeneous broadening became wider as As composition increased.

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