Abstract

The impact of strain on the characteristics of III/V semiconductor laser diodes has already been demonstrated several times. InGaAs/GaAs strained quantum well (QW) lasers exhibit low threshold cur rents, high quantum efficiencies, high modulation bandwidths, and show improved reliabilities.¹ Since 1991 InAlGaAs has been introduced as a new quaternary compound to realise strained QW lasers for a wavelength range between 750 and 900 nm.^2,3 This wavelength domain related to GaAs/AlGaAs lasers offers several applications such as solid-state pumping, Cd lasers, etc. Compared to AlGaAs/AlGaAs QWs, the introduction of indium into the QW should result in lower threshold current densities (due to a strongly modified energy bandstructure) and improved reliabilities (due to lattice hardening).

© 1994 IEEE