Abstract

InGaAlP/InGaP visible laser diodes emitting in the 600 nm range are considered to be promising optical sources for use in optical information systems such as high density optical disks, laser beam printers, and bar-code readers.¹ One of the important problems to be solved for practical use is high threshold current of this system. Among many methods, high doping in the clad layer and compressive strain in the active layer² are considered the most effective ones to reduce a threshold current. This study demonstrates that a very low threshold current can be obtained for simple one step epitaxial structure by applying these two effects.

© 1994 IEEE