Abstract

Field-effect waveguide devices have many attractions because of their advantages of fabrication simplicity, highpower handling capability, wide-operational bandwidth, etc. The previous theoretical analysis on this topic is mainly concentrated to the conventional infinity thin electrode configuration.¹⁻³ Since the field-effect waveguide with simple thin electrode configuration can only perform some basic applications, a field-effect waveguide device with more complicated electrode configuration is needed for better performance characteristics and more advanced applications. A field-effect waveguide with the embedded thick-film three electrode configuration is analyzed here. This electrode configuration gives us more freedom to control both the position and the profile of the induced waveguide. Just like the field-effect transistor (FET), the field-effect waveguide utilizes two electrodes (similar to “source" and "drain" in FET) to build up (induce) and control the induced-waveguide shape, while it uses the third electrode (similar to "gate" in FET) to control the induced-waveguide position.

© 1994 IEEE