Abstract

Asymmetric Fabry-Perot (AFP) structure in p-i-n diode optical modulator has been the subject of recent research since AFP not only enhances the modulation and contrast ratio but also reduces the operating voltage due to its thin intrinsic region thickness (t_i).^1,2 When AFP is associated with extremely shallow quantum wells (ESQW)³ in optical bistable symmetric self-electrooptic effect devices (S- SEED), it leads to significantly improved performances, such as lower operating voltage and larger optical bistability even without applied voltage.⁴ Furthermore, low incident energy for switching would be realized in AFP. Here, we present the quantitative results on the required incident switching energy (E_o) and the switching speed limit of AFP ESQW S- SEED (AE-SEED) using a scattering matrix method and analytically obtained impulse response functions, respectivley.

© 1994 IEEE