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Thermal and absorption saturation effects on the reading beam intensity limit of an extremely shallow quantum well self electro-optic effect device with asymmetric Fabry-Perot etalon structure

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Abstract

To achieve low operating voltage, fast switching time, and high ON/OFF contrast ratio, we learned that an extremely shallow multiple quantum well (ESQW) symmetric self electro-optic effect device (S-SEED) having an asymmetric Fabry-Perot (AFP) etalon structure, that we named AFP-ESQW S-SEED (AE-SEED), is effective as reported previously.1 In this paper we report experimental results and the analysis of the upper limit of the reading beam intensity.

© 1994 IEEE

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