Abstract
To achieve low operating voltage, fast switching time, and high ON/OFF contrast ratio, we learned that an extremely shallow multiple quantum well (ESQW) symmetric self electro-optic effect device (S-SEED) having an asymmetric Fabry-Perot (AFP) etalon structure, that we named AFP-ESQW S-SEED (AE-SEED), is effective as reported previously.1 In this paper we report experimental results and the analysis of the upper limit of the reading beam intensity.
© 1994 IEEE
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