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Conferences > CLEO_Europe > 1994 > CThP > CThP4

1.5 μm Room-temperature luminescence from erbium in oxygen-doped silicon grown by molecular beam epitaxy

R. Serna, M. Lohmeier, E. Vlieg, and A. Polman

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Abstract

The indirect bank gap of Si precludes efficient light emission under electrical excitation. This makes Si impractical for optoelectronic applications. By doping the Si with erbium, characteristic Er intra-4f shell emission at 1.5 μm can be obtained at liquid nitrogen temperate.1 Earlier reports have shown that the luminescence intensity can be enhanced by the presence of low concentrations of oxygen.2,3,4

© 1994 IEEE

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