Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Q-switched pulses at 16 GHz from two-section semiconductor lasers

Not Accessible

Your library or personal account may give you access

Abstract

We report the demonstration of efficient passive Q-switching in GaAs/AlGaAs and strained layer InGaAs MQW lasers containing a monolithic intracavity electroabsorption loss modulator. Self-pulsation was observed at repetition rates as high as 16 GHz with optical pulse energies as high as 5 pj (pulse width 25 ps FWHM).

© 1994 IEEE

PDF Article
More Like This
High Frequency Q-Switched Operation of a VCSEL with Intracavity Electroabsorption Modulator

J. van Eisden, M. Yakimov, V. Tokranov, S. Oktyabrsky, E. M. Mohammed, and I. A. Young
CWG2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006

Multiple colliding pulse mode-locking in a semiconductor laser: experiment and theory

J. F. Martins-Filho, E. Avrutin, and C. N. Ironside
CTuL3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1994

Device and process technologies lor monolithic, high-speed, low-chirp semiconductor laser transmitters

J. D. Ralston, S. Weisser, A. Schönfelder, E. C. Larkins, J. Rosenzweig, W. Bronner, J. Hornung, and K. Köhler
CThB1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1994

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.