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Conferences > CLEO_Europe > 1994 > CTuK > CTuK24

Gain and threshold current calculations for far-infrared semiconductor lasers

W. M. Yee and K. A. Shore

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Abstract

The optical properties of semiconductor quantum well structures for operation in the infrared have attracted considerable attention. Particular emphasis has been given to the design and implementation of photodetectors based upon intersubband absorption in quantum well structures. With a view to applications in spectroscopy, medicine, and free-space communications, it is of considerable interest to utilise intersubband emission processes to realize infrared semiconductor lasers.

© 1994 IEEE

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