Abstract

The large number of carriers injected into a semiconductor laser near threshold means that their interaction with one another is an important consideration in the modelling of gain-current characteristics. Carriers remain in their energy states a finite amount of time due to the scattering with other carriers and phonons. There is then an associated broadening of any radiative transitions involving these states. Several theoretical studies of the scattering rates and the associated energy broadening of the electron states have been performed. The broadening of the states is found to be dependent on the carrier population and on the energy of the state, although the majority of calculations of radiative recombination spectra have included a constant energy broadening.

© 1994 IEEE