Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO_Europe > 1994 > CTuK > CTuK52

Passive semiconductor shutters for infrared Er and Ho lasers

A. Lukashev, A. Chernikov, and A. Kozhukhov

Not Accessible

Your library or personal account may give you access

Abstract

Bleaching properties of epi-layers of InxGa1-xAs compound with variable x on different substrates were tested with regard to their possible use as passive shutters for Er-glass (λ = 1.54µm) Ho (λ = 2.1µm) and Er (λ = 2.79-2.94µm) lasers. Passive Q-switching in Ho and Er lasers was achieved. Operation and limitations of using of these shutters in flashlamp and diode-pump IR solid-state lasers are discussed.

© 1994 IEEE

PDF Article
More Like This
PbS(Se)-Doped Glasses as Passive Q-Switches for 1.5-µm Er:Glass and 2.1-µm Ho:YAG Lasers

A. M. Malyarevich, I. A. Denisov, N. N. Posnov, P. V. Prokoshin, K. V. Yumashev, and A. A. Lipovskii
ME12 Advanced Solid State Lasers (ASSL) 2000

Er:Glass and Ho:YAG Lasers Passively Q-Switched with PbS(Se) Quantum Dot Saturable Absorbers

A.M. Malyarevich, I.A. Denisov, N.N. Posnov, V.G. Savitsky, P.V. Prokoshin, K.V. Yumashev, A.A. Lipovskii, and E.V. Kolobkova
CTuA6 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2000

High performance, diode-pumped, Q-switched Er:Yb:GIass laser with FTIR shutter

E. Geoogioo, O. Mussst, and J. P. Boquillon
CTuA3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2000

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use