Abstract

Planar metal-semiconductor-metal (MSM) structures prepared on GaAs have attained outstanding frequency limits as high speed photodetector and light modulator due to the low capacitance of the planar electrode design. The operation wavelength of 1.3 µm and 1.55 µm for applications in optical communication systems are obtained by solid source MBE growth of the quaternary material system AlGaInAs under lattice-matching conditions on InP. To achieve high-quality Schottky contacts with low dark currents and high breakdown voltages, an AlInAs barrier enhancement layer has to be inserted between the AlGaInAs active layer and the PtAu metal contact. Integration of the basic MSM structure with a Fabry-Perot resonator results in wavelength selective photodetection and modulation.

© 1994 IEEE