Abstract

With respect to today's optical communication systems using bitrates in the regime of several 10 GHz, the understanding of ultrafast processes in semiconductor devices with sub-micron dimensions is of growing importance for device optimization. MSM photodetectors commonly fabricated on semi-insulating materials are very promising for system applications,^1,2 because of their simple planar structure, high frequency response, low dark currents, and process compatibility to MESFET technology. However, the pulse response with very short rise- and FWHM-times of the detectors is often deteriorated by a long exponential tail.

© 1994 IEEE