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Linear array performance based on Si:As blocked impurity band (BIB) IR detectors

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Abstract

An additional undoped layer (blocking layer) formed in the extrinsic photoconductive IR detector allowed to increase the amount of donors in the IR-active layer without increasing dark current.1 It permits to construct the focal arrays with high responsivity, signal-to-noise ratio, and insensitive to ionizing radiation.2

© 1994 IEEE

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