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Conferences > CLEO_Europe > 1994 > CTuQ > CTuQ5

Thermal annealing of the Si/SiO2 interface probed by surface nonlinear optical techniques

C. Meyer, F. Wolter, G. Lüpke, U. Emmerichs, H. Kurz, T. Yasuda, G. Lucovsky, and C. H. Bjorkman

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Abstract

Optical second-harmonic (SH) and sum-frequency (SF) measurements on vicinal Si(111)-interfaces provide some quantitative details on the microscopic structure of the interface of thermally grown oxide films subjected to a post oxidation annealing. A change of the azimuthal SF-anisotropy upon rapid thermal annealing (RTA) is attributed to a relaxation of atomic bondings at the interface consistent with a decrease of the interfacial trap density.1

© 1994 IEEE

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