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Conferences > CLEO_Europe > 1996 > CFG > CFG2

Oxidation of InAlAs for Long Wavelength Vertical-Cavity Laser Diodes

D. Sowada, H.Y.A Chung, G. Stareev, M. Grabherr, B. Weigl, T. Wipiejewski, and K.J. Ebeling

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Abstract

The excellent performance of vertical-cavity surface-emitting lasers (VCSELs) in the wavelength range below 1mm is largely due to the superior properties of the epitaxially grown AlAs-GaAs distributed Bragg reflectors (DBRs). For long wavelength VCSELs there is no material combination for Bragg reflectors with properties as good as AlAs-GaAs. Therefore we decided to explore the possibility of employing InP and oxidized InAlAs as high and low index material in highly reflecting Bragg mirrors at a wavelength of 1 55mm. Here we describe initial results on the oxidation of InAlAs layers.

© 1996 IEEE

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