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Conferences > OECC > 1996 > 16D1 > 16D1.4
  • First Optoelectronics and Communications Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper 16D1.4

InAlAs-oxide/lnP Distributed Bragg Reflectors by Selective Oxidation

Hirokazu Takenouchi, Toshiaki Kagawa, Yoshitaka Ohiso, Takashi Tadokoro, and Takashi Kurokawa

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Abstract

We report a new type of DBR; InAlAs-oxide/lnP by selective oxidation. When oxidized, the InAlAs layer’s refractive index changes from 3.2 to 2.5 and it shrinks by 8.8%. A 10-pair DBR exhibits high reflectivity (96.9%) at 1.29 μm.

© 1996 IEICE

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