Abstract

The vertical cavity surface emitting laser (VCSEL) is recognized as one important device in applications such as optical interconnects, optical communications and so on. Most of VCSELs have been fabricated on (100)-oriented substrates, and exhibit linear polarization. But usually it is unstable due to the small polarization selectivity [1]. The polarization control is, therefore, an important subject for polarization-sensitive applications. One of the control methods is to use the effect of optical anisotropy of strained quantum wells (QWs) grown on (n11)-oriented substrates [2]. We present here the first result on the stable polarization characteristics of a (311)A-oriented InGaAs/GaAs VCSEL operated at room temperature

© 1996 IEEE